JPS5167079A - - Google Patents

Info

Publication number
JPS5167079A
JPS5167079A JP50128800A JP12880075A JPS5167079A JP S5167079 A JPS5167079 A JP S5167079A JP 50128800 A JP50128800 A JP 50128800A JP 12880075 A JP12880075 A JP 12880075A JP S5167079 A JPS5167079 A JP S5167079A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50128800A
Other languages
Japanese (ja)
Other versions
JPS533235B2 (en]
Inventor
Girubaato Samaazu Joon
Piaarehonto Moorisu
Jon Jotsushu Maikuru
Eibisu Airin Mirudoretsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5167079A publication Critical patent/JPS5167079A/ja
Publication of JPS533235B2 publication Critical patent/JPS533235B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP12880075A 1974-10-29 1975-10-25 Expired JPS533235B2 (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB46726/74A GB1485015A (en) 1974-10-29 1974-10-29 Semi-conductor device manufacture

Publications (2)

Publication Number Publication Date
JPS5167079A true JPS5167079A (en]) 1976-06-10
JPS533235B2 JPS533235B2 (en]) 1978-02-04

Family

ID=10442362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12880075A Expired JPS533235B2 (en]) 1974-10-29 1975-10-25

Country Status (10)

Country Link
US (2) US4028140A (en])
JP (1) JPS533235B2 (en])
AU (1) AU500045B2 (en])
BE (1) BE834965A (en])
CA (1) CA1057172A (en])
CH (1) CH595697A5 (en])
DE (1) DE2546564A1 (en])
FR (1) FR2290033A1 (en])
GB (1) GB1485015A (en])
NL (1) NL7512514A (en])

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
IT1068248B (it) * 1976-11-16 1985-03-21 Selenia Ind Elettroniche Procedimento per la realizzazione di dispositivi a semiconduttore passivati con dissipatore di calore integrato
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4162185A (en) * 1978-03-21 1979-07-24 International Business Machines Corporation Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si
US4176004A (en) * 1978-08-21 1979-11-27 Westinghouse Electric Corp. Method for modifying the characteristics of a semiconductor fusions
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
US4373255A (en) * 1979-06-19 1983-02-15 The United States Of America As Represented By The Secretary Of The Air Force Method of making oxide passivated mesa epitaxial diodes with integral plated heat sink
US4211582A (en) * 1979-06-28 1980-07-08 International Business Machines Corporation Process for making large area isolation trenches utilizing a two-step selective etching technique
FR2476912A1 (fr) * 1980-02-22 1981-08-28 Thomson Csf Procede d'isolement des interconnexions de circuits integres, et circuit integre utilisant ce procede
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
US4389294A (en) * 1981-06-30 1983-06-21 International Business Machines Corporation Method for avoiding residue on a vertical walled mesa
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
GB8607822D0 (en) * 1986-03-27 1986-04-30 Plessey Co Plc Iii-v semiconductor devices
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
JP3230829B2 (ja) * 1992-01-14 2001-11-19 株式会社日立製作所 車両用交流発電機と整流器
US5695632A (en) * 1995-05-02 1997-12-09 Exxon Research And Engineering Company Continuous in-situ combination process for upgrading heavy oil
CN1047469C (zh) * 1996-09-05 1999-12-15 中国科学院半导体研究所 制作半导体台面侧向电流限制结构的技术
US5844291A (en) * 1996-12-20 1998-12-01 Board Of Regents, The University Of Texas System Wide wavelength range high efficiency avalanche light detector with negative feedback
US5880490A (en) * 1997-07-28 1999-03-09 Board Of Regents, The University Of Texas System Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation
US6232229B1 (en) 1999-11-19 2001-05-15 Micron Technology, Inc. Microelectronic device fabricating method, integrated circuit, and intermediate construction
US6514805B2 (en) * 2001-06-30 2003-02-04 Intel Corporation Trench sidewall profile for device isolation
FR2829616B1 (fr) * 2001-09-10 2004-03-12 St Microelectronics Sa Diode verticale de faible capacite
JP4046586B2 (ja) * 2002-01-16 2008-02-13 シャープ株式会社 化合物半導体素子及びその製造方法
US7162133B2 (en) * 2004-08-20 2007-01-09 Agency For Science Technology And Research Method to trim and smooth high index contrast waveguide structures
JP2009302222A (ja) * 2008-06-12 2009-12-24 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
KR101371401B1 (ko) * 2010-11-03 2014-03-10 한국전자통신연구원 애벌런치 광다이오드 및 그 형성방법
JP5803366B2 (ja) * 2011-07-14 2015-11-04 住友電気工業株式会社 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ
CN115083922B (zh) * 2022-05-31 2025-08-12 中国电子科技集团公司第十三研究所 一种正磨角氧化镓肖特基二极管器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL153947B (nl) * 1967-02-25 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.
US3509428A (en) * 1967-10-18 1970-04-28 Hughes Aircraft Co Ion-implanted impatt diode
DE1963757C3 (de) * 1968-12-27 1979-05-03 Matsushita Electronics Corp., Kadoma, Osaka (Japan) Verfahren zum Herstellen eines Mesa-Halbleiterbauelements
US3742593A (en) * 1970-12-11 1973-07-03 Gen Electric Semiconductor device with positively beveled junctions and process for its manufacture
NL7103156A (en]) * 1971-03-10 1972-09-12 Philips Nv
DE2117199C3 (de) * 1971-04-08 1974-08-22 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US3886580A (en) * 1973-10-09 1975-05-27 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
US3894895A (en) * 1973-10-29 1975-07-15 Trw Inc Mesa etching without overhang for semiconductor devices
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
US3878008A (en) * 1974-02-25 1975-04-15 Us Navy Method of forming high reliability mesa diode

Also Published As

Publication number Publication date
AU500045B2 (en) 1979-05-10
DE2546564A1 (de) 1976-05-06
BE834965A (fr) 1976-04-28
GB1485015A (en) 1977-09-08
FR2290033A1 (fr) 1976-05-28
NL7512514A (nl) 1976-05-04
JPS533235B2 (en]) 1978-02-04
CH595697A5 (en]) 1978-02-28
AU8594475A (en) 1977-04-28
US4028140A (en) 1977-06-07
US4007104A (en) 1977-02-08
CA1057172A (en) 1979-06-26

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